Member for semiconductor manufacturing device

ABSTRACT

A member for a semiconductor manufacturing device includes an alumite base material including a concavity and a first layer formed on the alumite base material and including an yttrium compound. The first layer includes an outer surface, a first region on a side of the outer surface, and a second region provided in the concavity and located between the first region and the alumite base material. The concavity includes first and second portions respectively provided with the first and second regions. A width of the second portion is narrower than a width of the first portion in a cross section along a stacking direction and a boundary of the first layer in the concavity and the alumite base material being curved convex toward the outer surface of the first layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. non-provisional patentapplication Ser. No. 16/127,923, filed Sep. 11, 2018, which is acontinuation application of International Application PCT/JP2017/032851,filed on Sep. 12, 2017, which is also based upon and claims the benefitof priority from Japanese Patent Application No. 2016-178671, filed onSep. 13, 2016, and Japanese patent Application No. 2017-173746, filed onSep. 11, 2017. The entire contents of all of these prior applicationsare incorporated herein by reference.

FIELD

Aspects of the invention relate generally to a member for asemiconductor manufacturing device.

BACKGROUND

A semiconductor manufacturing device is used for processing such as dryetching, sputtering and CVD (Chemical Vapor Deposition) or the like in achamber in a manufacturing process of a semiconductor device. In thischamber, particles may be generated from a workpiece or an inner wall ofthe chamber or the like. Since the particles cause decrease of yield ofthe manufactured semiconductor device, the particles are desired to bereduced.

In order to reduce the particles, plasma resistance is required for thechamber and the member for semiconductor manufacturing device usedaround the chamber. Then, a method of coating the surface of the memberfor the semiconductor manufacturing device with a coating (layer)excellent in plasma resistance is used. For example, a member having anyttria sprayed film formed on the surface of the base material is used.However, cracking and peeling may occur in the sprayed film, anddurability is not sufficient. Since peeling of the coating and sheddingfrom the coating cause particles to occur, it is required to suppressthe peeling of the coating from the base material. On the contrary, JP2005-158933 A (Kokai) discloses a semiconductor or a material of aliquid crystal manufacturing device based on a ceramic film formed by anaerosol deposition method.

Recently, refinement of a semiconductor device is progressed and controlof particles at a nanometer level is required.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view illustrating a semiconductormanufacturing device including a member for a semiconductormanufacturing device according to an embodiment;

FIG. 2A and FIG. 2B are cross-sectional views illustrating the memberfor the semiconductor manufacturing device according to the embodiment;

FIG. 3 is a photograph showing a cross section of the member for thesemiconductor manufacturing device according to the embodiment;

FIG. 4 is a photograph showing a cross section of a first layer;

FIG. 5 is a photograph showing a cross section of the first layer;

FIG. 6A and FIG. 6B are a table and a graph showing a particle diameterin the first layer;

FIG. 7A to FIG. 7C are photographs illustrating structure analysis ofcrystal particles in the first layer;

FIG. 8A to FIG. 8D are photographs illustrating structure analysis ofcrystal particles in the first layer;

FIG. 9 is a table showing a crystal structure of crystal particles inthe first layer;

FIG. 10 is a table showing a crystal size in the first layer;

FIG. 11A and FIG. 11B are a table and a graph showing an area ratio of asparse region in the first layer;

FIG. 12A to FIG. 12D are photographs showing a cross section of thefirst layer;

FIG. 13A to FIG. 13D are photographs showing a cross section of thefirst layer;

FIG. 14 is a photograph showing a cross section of the member for thesemiconductor manufacturing device according to the embodiment;

FIG. 15 is a photograph showing a cross section of the member for thesemiconductor manufacturing device according to the embodiment;

FIG. 16 is a photograph showing a cross section of the member for thesemiconductor manufacturing device according to the embodiment;

FIG. 17 is a table illustrating a shape of the first layer of the memberfor the semiconductor manufacturing device according to the embodiment;

FIG. 18 is a table illustrating a shape of the first layer of the memberfor the semiconductor manufacturing device according to the embodiment;

FIG. 19 is a table illustrating a shape of the first layer of the memberfor the semiconductor manufacturing device according to the embodiment;and

FIG. 20A and FIG. 20B are photographs illustrating the member for thesemiconductor manufacturing device according to the embodiment.

DETAILED DESCRIPTION

The first invention is a member for a semiconductor manufacturing deviceincluding: an alumite base material including a concavity; and a firstlayer formed on the alumite base material and including an yttriumcompound, the first layer including a first region, and a second regionprovided in the concavity and located between the first region and thealumite base material, an average particle diameter in the first regionbeing shorter than an average particle diameter in the second region.

According to the member for the semiconductor manufacturing device, theaverage particle diameter of the first region near a surface is smallerthan the average particle diameter of the second region. That is, thefirst layer has a dense structure in the first region on the surfaceside of the member for the semiconductor manufacturing device. Thereby,a plasma resistance can be improved. The first layer has a sparsestructure in the second region in the concavity in comparison with thefirst region. Since the second region has a sparse structure, a stressgenerated near the interface of the first layer in the concavity and thealumite base material can be released and relaxed. Thereby, peeling offof the first layer from the alumite base material can be suppressed.From the above, particles can be reduced.

The second invention is the member for the semiconductor manufacturingdevice of the first invention, wherein the average particle diameter ofthe first region is not less than 10 nanometers and not more than 19nanometers, and the average particle diameter of the second region isnot less than 20 nanometers and not more than 43 nanometers.

According to the member for the semiconductor manufacturing device, thefirst layer has a dense structure in the first region on the surfaceside of the member for the semiconductor manufacturing device. Thereby,the plasma resistance can be improved. The first layer has a sparsestructure in the second region in the concavity. Thereby, the stressgenerated near the interface of the first layer in the concavity and thealumite base material can be relaxed, and peeling off of the first layerfrom the alumite base material can be suppressed. From the above, theparticles can be reduced.

The third invention is a member for a semiconductor manufacturing deviceincluding: an alumite base material including a concavity; and a firstlayer formed on the alumite base material and including yttrium oxide,the first layer including a first region, and a second region providedin the concavity and located between the first region and the alumitebase material, the first region having a monoclinic crystal as a mainphase, and the second region having a cubic crystal as a main phase.

According to the member for the semiconductor manufacturing device,crystal particles of the first region are distorted in comparison withcrystal particles of the second region. That is, the crystal particlesof the first region have a collapsed shape in comparison with thecrystal particles of the second region. Therefore, an yttrium oxidelayer has a dense structure on the surface side of the member for thesemiconductor manufacturing device. Thereby, the plasma resistance canbe improved. The first layer has a sparse structure in the second regionin the concavity in comparison with the first region. Since the secondregion has the sparse structure, the stress generated near the interfaceof the first layer in the concavity and the alumite base material can berelaxed, and peeling off of the first layer from the alumite basematerial can be suppressed. From the above, the particles can bereduced.

The fourth invention is a member for a semiconductor manufacturingdevice including: an alumite base material including a concavity; and afirst layer formed on the alumite base material and including yttriumoxide, a crystallite size of a cubic phase in the first layer being notless than 8 nanometers and not more than 39 nanometers, and acrystallite size of an orthorhombic phase in the first layer being notless than 5 nanometers and not more than 19 nanometers.

According to the member for the semiconductor manufacturing device, acrystallite size of a monoclinic phase in the first layer is small incomparison with a crystallite size of the cubic phase in the firstlayer. That is, the monoclinic phase has a dense structure. Since thefirst layer has the dense monoclinic phase, the plasma resistance can beimproved and the particles can be reduced.

The fifth invention is a member for a semiconductor manufacturing deviceincluding: an alumite base material including a concavity; and a firstlayer formed on the alumite base material and including an yttriumcompound, the first layer including a first region, and a second regionprovided in the concavity and located between the first region and thealumite base material, the first region being denser than the secondregion.

According to the member for the semiconductor manufacturing device, thefirst layer has the dense structure in the first region on the surfaceside of the member for the semiconductor manufacturing device. Thereby,the plasma resistance can be improved. The first layer has the sparsestructure in the second region in the concavity. Thereby, the stressgenerated near the interface of the first layer in the concavity and thealumite base material can be relaxed and peeling off of the first layerfrom the alumite base material can be suppressed. From the above, theparticles can be reduced.

The sixth invention is the member for the semiconductor manufacturingdevice of the fifth invention, wherein a ratio of an area of a sparseregion in a cross section of the first region to an area of the crosssection of the first region is not less than 0.4% and not more than1.7%, and a ratio of an area in a sparse region in a cross section ofthe second region to an area of the cross section of the second regionis not less than 2.0%.

According to the member for the semiconductor manufacturing device, thefirst layer has the dense structure in the first region on the surfaceside of the member for the semiconductor manufacturing device. Thereby,the plasma resistance can be improved. The first layer has the sparsestructure in the second region in the concavity. Thereby, the stressgenerated near the interface of the first layer in the concavity and thealumite base material can be relaxed, and peeling off of the first layerfrom the alumite base material can be suppressed. From the above, theparticles can be reduced.

The seventh invention is a member for a semiconductor manufacturingdevice including: an alumite base material including a concavity; and afirst layer formed on the alumite base material and including an yttriumcompound, the first layer including a first region, and a second regionprovided in the concavity and located between the first region and thealumite base material, the concavity including a first portion providedwith the first region and a second portion provided with the secondregion, and a width of the second portion being narrower than a width ofthe first portion in a cross section along a stacking direction.

According to the member for the semiconductor manufacturing device, awidth of the concavity can be suppressed from changing rapidly, and thestress generated near the interface of the first layer in the concavityand the alumite base material can be suppressed from being concentrated.Therefore, the first layer can be suppressed from peeling off from thealumite base material, and the particles can be reduced.

The eighth invention is the member for the semiconductor manufacturingdevice of the seventh invention, wherein the second portion has a bottomsurface along a plane perpendicular to the stacking direction, and aratio of an opening width of the first portion to a width of the bottomsurface is not less than 1.1 times in the cross section.

According to the member for the semiconductor manufacturing device, awidth of the concavity can be suppressed from changing rapidly, and thestress generated near the interface of the first layer in the concavityand the alumite base material can be suppressed from being concentrated.Therefore, the first layer can be suppressed from peeling off from thealumite base material, and the particles can be reduced.

The ninth invention is the member for the semiconductor manufacturingdevice of the seventh or eighth invention, wherein the first layer has asurface opposite to a surface contacting the alumite base material, anda width of the concavity in the cross section becomes narrower as itgoes away from the surface.

According to the member for the semiconductor manufacturing device, thestress generated near the interface of the first layer in the concavityand the alumite base material can be suppressed from being concentrated.

The tenth invention is the member for the semiconductor manufacturingdevice of the seventh invention, wherein an opening of the concavity hasa first end portion and a second end portion separated each other in thecross section, the second portion has a bottom surface along a planeperpendicular to the stacking direction, and an angle made by a straightline connecting the first end portion and the second end portion and astraight line connecting the first end portion and the bottom surface inthe shortest length in the cross section is not less than 10° and notmore than 89°.

According to the member for the semiconductor manufacturing device, awidth of the concavity can be suppressed from changing rapidly, and thestress generated near the interface of the first layer in the concavityand the alumite base material can be suppressed from being concentrated.Therefore, the first layer can be suppressed from peeling off from thealumite base material, and the particles can be reduced.

The eleventh invention is the member for the semiconductor manufacturingdevice of one of the seventh to tenth inventions, wherein a boundary ofthe first layer in the concavity and the alumite base material is curvedin the cross section.

According to the member for the semiconductor manufacturing device, adiscontinuous change of the boundary of the first layer in the concavityand the alumite base material can be suppressed, and the stressgenerated near the interface of the first layer in the concavity and thealumite base material can be suppressed from being concentrated.Therefore, the first layer can be suppressed from peeling off from thealumite base material.

The twelfth invention is the member for the semiconductor manufacturingdevice of one of the seventh to eleventh inventions, wherein a boundaryof the first layer in the concavity and the alumite base material has acurvature in the cross section.

According to the member for the semiconductor manufacturing device, adiscontinuous change of the boundary of the first layer in the concavityand the alumite base material can be suppressed, and the stressgenerated near the interface of the first layer in the concavity and thealumite base material can be suppressed from being concentrated.Therefore, the first layer can be suppressed from peeling off from thealumite base material.

The thirteenth invention is the member for the semiconductormanufacturing device of one of the seventh to twelfth inventions,wherein a curvature radius of a boundary of the first layer in theconcavity and the alumite base material is not less than 0.4micrometers.

According to the member for the semiconductor manufacturing device, awidth of the concavity can be suppressed from changing rapidly, and thestress generated near the interface of the first layer in the concavityand the alumite base material can be suppressed from being concentrated.Therefore, the first layer can be suppressed from peeling off from thealumite base material, and the particles can be reduced.

Various embodiments of the invention will be described hereinafter withreference to the accompanying drawings. In the drawings, similarcomponents are marked with like reference numerals, and a detaileddescription is omitted as appropriate.

FIG. 1 is a cross-sectional view illustrating a semiconductormanufacturing device including a member for a semiconductormanufacturing device according to an embodiment.

A semiconductor manufacturing device 100 shown in FIG. 1 includes achamber 110, a member for the semiconductor manufacturing device 120,and an electrostatic chuck 160. The member for the semiconductormanufacturing device 120 is called as a top board or the like, forexample, and is provided in an upper portion inside the chamber 110. Theelectrostatic chuck 160 is provided in a lower portion inside thechamber 110. That is, the member for the semiconductor manufacturingdevice 120 is provided on the electrostatic chuck 160 inside the chamber110. An object to be adsorbed such as a wafer 210 or the like is placedon the electrostatic chuck 160.

A high frequency power is supplied to the semiconductor manufacturingdevice 100, and a source gas such as a halogen-based gas is introducedinto the chamber 110 as indicated by an arrow A1 shown in FIG. 1, forexample. Then, the source gas introduced into the chamber 110 is madeinto plasma in a region 191 between the electrostatic chuck 160 and themember for the semiconductor manufacturing device 120.

Here, if a particle 221 generated inside the chamber 110 adheres to thewafer 210, failure may occur in the manufactured device. In such a case,yield and productivity of the semiconductor device may decrease. Forthat reason, plasma resistance is required for the member for thesemiconductor manufacturing device 120.

The member for the semiconductor manufacturing device may be a memberdisposed at a position other than the upper portion inside the chamberand around the chamber. The semiconductor manufacturing device based onthe member for the semiconductor manufacturing device is not limited tothe example of FIG. 1, and includes any semiconductor manufacturingdevice (semiconductor processing device) performing processing such asannealing, etching, sputtering, CVD or the like.

FIG. 2A and FIG. 2B are cross-sectional views illustrating the memberfor the semiconductor manufacturing device according to the embodiment.

As shown in FIG. 2A, the member for the semiconductor manufacturingdevice includes an alumite base material 10 and a first layer 20.

In the following description, a stacking direction of the alumite basematerial 10 and the first layer 20 is taken as a Z-axis direction. Onedirection perpendicular to the Z-axis direction is taken as an X-axisdirection. A direction perpendicular to the Z-axis direction and theX-axis direction is taken as a Y-axis direction.

The alumite base material 10 includes a member 11, and an alumite layer12 provided on the member 11. A material of the member 11 includes, forexample, aluminum or an aluminum alloy. The alumite layer 12 includesaluminum oxide (Al₂O₃). The alumite layer 12 is formed by subjecting themember 11 to alumite treatment. That is, the alumite layer 12 is ananode oxide coating covering the surface of the member 11. A thicknessof the alumite layer 12 is, for example, approximately not less than 0.5micrometers (μm) and not more than 70 μm.

A process of the alumite treatment includes generally forming a densealuminum oxide layer (coating) on a surface of an aluminum basematerial, growing the aluminum oxide layer, sealing treatment asnecessary, and drying. Porous aluminum oxide is formed in the growingthe aluminum oxide layer of these processes, and a hole is formed as oneform of the concavity. A crack is formed as one form of the concavity inthe aluminum oxide layer by a difference between a thermal expansioncoefficient of aluminum metal and a thermal expansion coefficient ofaluminum oxide, the difference is due to the heat treatment in thesealing treatment and the drying. If a thickness of the aluminum oxidelayer formed by the alumite treatment is approximately 0.3 μm, the densealuminum oxide layer without the concavity is obtained. If the thicknessof the aluminum oxide layer is not less than 0.5 μm, the porous aluminumoxide with the concavity is formed. The thickness of a general alumitetreatment coating is not less than 5 μm and not more than 70 μm.

The first layer 20 includes an yttrium compound. For example, the firstlayer 20 includes at least one of fluorine or oxygen and yttrium. Thefirst layer 20 is, for example, yttrium oxide (Y₂O₃), yttrium fluoride(YF₃) or yttrium oxyfluoride (YOF). In the following example, the firstlayer 20 is a polycrystal of yttria (Y₂O₃). The thickness of the firstlayer 20 is, for example, approximately 5 μm.

The first layer 20 has a plane 201 on a side of the alumite basematerial 10 and a surface 202 on an opposite side to the plane 201. Thefirst layer 20 contacts the alumite base material 10 on the plane 201.The surface 202 is a surface of the member for the semiconductormanufacturing device 120.

The first layer 20 is formed by “an aerosol deposition method”. Theaerosol deposition method is a method of spraying “aerosol” with fineparticles including a brittle material dispersed in a gas from a nozzletoward the base material, colliding against the base material such asmetal, glass, ceramics, plastics or the like, causing the brittlematerial particles to deform or crush by impact of the collision andcausing those to join, and forming directly a layered structure (alsocalled a film-shaped structure) made of constituent material of theparticles on the base material.

In this example, the aerosol including particles including yttria issprayed toward the base material (the alumite layer 12 of the alumitebase material 10), and the layered structure (the first layer 20) isformed.

According to the aerosol deposition method, it is possible to form thelayered structure at a normal temperature without particular necessityof heating means or cooling means, and the layered structure having amechanical strength equivalent to or greater than a fired body can beobtained. It is possible to variously change the density, the mechanicalstrength, the electrical characteristics or the like of the layeredstructure by controlling a condition of fine particle collision, a shapeand a composition or the like of the fine particles.

In the specification of the application, “polycrystal” refers to astructure formed by joining/accumulating of crystal particles. Thecrystal particle constitutes a crystal substantially by one. A diameterof the crystal particle is ordinarily not less than 5 nanometers (nm).However, in the case where the fine particles are captured into thestructure without being crushed, the crystal particle is a polycrystal.

In the specification of the application, “fine particle” refers to aparticle of which an average particle diameter identified by particlesize distribution measurement or scanning electron microscope or thelike is not more than 5 micrometers (μm), in the case where a primaryparticle is a dense particle. In the case where the primary particle isa porous particle which is easily crushed by the impact, a particlehaving an average particle diameter not more than 50 μm is referred to.

In the specification, “aerosol” indicates a solid-gas mixed phase bodyhaving the fine particles previously described dispersed in a gas suchas helium, nitrogen, argon, oxygen, dry air, a mixed gas including thosegases. Although “aggregate” is partially included, a state in which thefine particles are dispersed substantially alone is referred to.Although a gas pressure and a temperature of the aerosol are arbitrary,it is favorable for forming the layered structure that a concentrationof the fine particles in the gas is in a range of 0.0003 mL/L to 5 mL/Lat a time of being sprayed from a discharge port, in the case ofconverting the gas pressure to 1 atm and the temperature to 20 degreesof centigrade.

The process of the aerosol deposition method is ordinarily performed ata normal temperature, and one feature is that it is possible to form thelayered structure at a temperature sufficiently lower than a meltingpoint of the fine particles material, namely, at a few hundred degreesof centigrade or lower.

In the specification of the application, “the normal temperature” refersto an extremely lower temperature to a sintering temperature ofceramics, a room temperature environment of substantially 0 to 100° C.

The fine particles constituting powder serving as the source material ofthe layered structure include the brittle material such as ceramics orsemiconductor or the like as a main component, and can include theparticles of the same material property alone or the particles mixingdifferent diameter particles. Furthermore, it is possible to use bymixing different kinds of brittle material fine particles or combiningthem. It is possible to mix the fine particles such as metal material ororganic material or the like with brittle material fine particles, andto coat on the surface of the brittle material fine particles. Even inthose cases, the layered structure is formed mainly of the brittlematerial.

In the specification of the application, “the powder” refers to a stateof the fine particles previously described being naturally aggregated.

In a composite structure formed by this method based on the crystallinebrittle fine particles as the source material, a portion of the layeredstructure of the composite structure is a polycrystal which the crystalparticle size is smaller than the crystal particle size of the sourcefine particles, and the crystal is not crystal oriented in many cases. Agrain boundary layer made of a glass layer does not substantially existin the interface of the brittle material crystals. In many cases, alayered structure portion of the composite structure forms “an anchorlayer” to dig into the surface of the base material (in this example,the alumite base material 10). The layered structure in which thisanchor layer is formed is formed to adhere to the base material withextremely high strength.

The layered structure formed by the aerosol deposition method is clearlydifferent from so called “a compacted powder body” in a state which thefine particles are packed by a pressure and the shape is held byphysical adhesion, and has a sufficient strength.

Flying brittle material particles crush and deform on the base materialin the aerosol deposition method. This can be confirmed by measuring thebrittle material particles used as the source material and crystallite(crystal particle) size of the formed brittle material structure usingX-ray diffraction method or the like. That is, the crystallite size ofthe layered structure formed by the aerosol deposition method is smallerthan the crystallite size of the source fine particles. “A newly formedsurface” in a state in which atoms originally existing inside the fineparticles and bonded to another atom are bare is formed on “a misalignedsurface” and “a fracture surface” formed by the crush or the deformationof the fine particles. It is considered that the layered structure isformed by joining the newly formed surface which has high surface energyand is active with the surface of the adjacent brittle material fineparticles and the newly formed surface of the adjacent brittle materialor the surface of the base material.

In the case where a hydroxyl group exists moderately on the surface ofthe fine particles in the aerosol, it can be considered that a mechanochemical acid base dehydration reaction occurs due to a local shearstress or the like generated between the fine particles and between thefine particles and the stricture at the collision of the fine particles,and the fine particles join together. It is considered that addition ofcontinuous mechanical impact force from the external generatescontinuously these phenomena, joining is progressed and densified byrepeat of the deformation and the crush of the fine particles, and thelayered structure made of the brittle material is grown.

The first layer 20 including an yttrium compound (for example, yttriapolycrystal) formed by the aerosol deposition method has a densestructure in comparison with the yttria fired body and the yttriasprayed film or the like. Thereby, the plasma resistance of the memberfor the semiconductor manufacturing device 120 according to theembodiment is higher than the plasma resistance of the fired body andthe sprayed film. A probability that the member for the semiconductormanufacturing device 120 according to the embodiment will be ageneration source of particles is lower than a probability that thefired body and the sprayed film will be a generation source ofparticles.

FIG. 2B is a cross sectional view enlarging the vicinity of a boundaryB1 between the alumite layer 12 and the first layer 20 shown in FIG. 2A.

As shown in FIG. 2B, the alumite base material 10 includes the concavity10 a and the convexity 10 b. As described previously, the alumite layer12 is, for example, an anode oxide coating formed by the alumitetreatment. A crack (concavity or hole) is formed in the alumite layer 12during the alumite treatment. For that reason, the concavity 10 a isformed on the surface of the alumite base material 10. The convexity 10b corresponds to a region where the crack is not formed on the alumitelayer 12 in the alumite treatment.

In the specification of the application, “the concavity” is “the crack”or “the depression” or the like existing in the alumite layer, andrefers to those not formed intentionally before and after the alumitetreatment. For example, “the concavity” in the specification of theapplication does not include those formed by intentional mechanicalprocessing.

The first layer 20 has a first region R1 and a second region R2. Thefirst region R1 is a region on a side of the surface 202 of the firstlayer 20. The second region R2 is a region on a side of the alumite basematerial 10 of the first layer 20. The second region R2 and at least aportion of the first region R1 are arranged in the Z-axis direction. Thesecond region R2 is located between the first region R1 and the alumitebase material 10.

The second region R2 is provided inside the concavity 10 a. That is, thesecond region R2 is surrounded by the surface of the alumite basematerial 10 forming the concavity 10 a in the X-Y plane. For example,the second region R2 contacts the surface of the alumite base material10 forming the concavity 10 a. The first region R1 is provided above thesecond region R2 (surface 202 side) and above the convexity 10 b. Forexample, the first region R1 contacts the alumite base material 10 in ashallow portion of the convexity 10 b and the concavity 10 a. Thesurface 202 of the first layer 20 is formed by the first region R1.

In the member for the semiconductor manufacturing device according tothe embodiment, the first region R1 is denser than the second region R2.In other words, the second region R2 is sparser than the first regionR1. According to this, the peeling off of the first layer 20 and thealumite base material 10 can be suppressed while improving the plasmaresistance of the first layer 20.

In the following the structure of the first layer 20 formed on thesurface of the alumite base material 10 (the alumite layer 12) will bedescribed.

FIG. 3 is a photograph showing a cross section of the member for thesemiconductor manufacturing device according to the embodiment.

FIG. 3 shows a TEM image (Transmission Electron Microscope), andcorresponds to the cross section shown in FIG. 2B.

In the following, the structures of regions A to F in the first layer 20shown in this photograph will be described. The regions A and B areincluded in the first region R1 previously described. The regions D, Eand F are included in the second region R2 previously described.

A white region above the first region R1 is a resin member used forfabricating an observation sample.

FIG. 4 and FIG. 5 are photographs showing a cross section of the firstlayer. These photographs are imaged by TEM. Observation magnification is250,000 times, and an acceleration voltage is 300 kV.

FIG. 4 is a photograph enlarging a portion of a region A of the firstregion R1, and FIG. 5 is a photograph enlarging a portion of a region Eof the second region R2. The magnification of the photograph shown inFIG. 4 is the same as the magnification of the photograph shown in FIG.5. As seen from FIG. 4 and FIG. 5, a crystal particle in the region Atends to be smaller than a crystal particle in the region E.

FIG. 6A and FIG. 6B are a table and a graph showing a particle diameterin the first layer.

FIG. 6A shows an average value (an average particle diameter), themaximum value and the minimum value of the particle diameter in each ofthe regions A to E. FIG. 6B shows the average particle diameter shown inFIG. 6A in a graph. The region A-1 shows a portion of the region A, andthe region A-2 shows another portion of the region A. The region B-1shows a portion of the region B, and the region B-2 shows anotherportion of the region B.

The particle diameters shown in FIG. 6A and FIG. 6B are calculated asfollows. 2 places (2 views) are imaged and 2 photographs similar to FIG.4 and FIG. 5 are acquired at a time. The imaged photographs are loadedby image processing software (Adobe System Co., Photoshop (registeredtrade mark)). The crystal particle having a grain boundary clearlyobserved is selected, and a line is drawn on an interface of the crystalparticle selected by Photoshop (registered trade mark). In FIG. 4 andFIG. 5, the selected crystal particles are marked with numbers. Thenumber of crystal particles selected here (number N shown in FIG. 6A) isapproximately 100 in total as acquired from two photographs in each ofthe regions A-1, A-2, B-1, B-2, C to E.

Next, image analysis software (Nireco Co., LUZEX AP) is used, and anequivalent circle diameter (diameter) is calculated on the basis of theline drawn on the interface with respect to each of the selected crystalparticles. The average particle diameter shown in FIG. 6A is anarithmetic average value (nm) in each region of the equivalent circlediameter calculated as described above. The maximum value and theminimum value shown in FIG. 6A are the maximum value (nm) and theminimum value (nm) in each region of the equivalent circle diametercalculated as described above.

As shown in FIG. 6A and FIG. 6B, the average particle diameter in theregions A, B are shorter than the average particle diameter in theregions D, E. That is, the average particle diameter in the first regionR1 is shorter than the average particle diameter in the second regionR2. The average particle diameter of the first region R1 is, forexample, not less than 10 nm and not more than 19 nm, favorably not lessthan 14 nm and not more than 16 nm. The average particle diameter of thesecond region R2 is, for example, not less than 20 nm and not more than43 nm, favorably not less than 39 nm and not more than 43 nm. This meansthat when the first layer 20 is formed by the aerosol deposition method,the crystal particle in the first region R1 collapses more than thecrystal particle in the second region R2. That is, the first layer 20has a dense structure in the surface side of the member for thesemiconductor manufacturing device 120. Thereby, the plasma resistancecan be improved.

Since the film is formed by the collision of the particles in theaerosol deposition method and is packed by a high pressure, the stress(residual stress) is generated near the interface of the first layer 20and the alumite layer 12. This stress is considered to be likelyconcentrated particularly near the crack (the concavity 10 a) of thealumite layer 12. When the stress is generated in the crack of thealumite layer 12, the crack progresses, the first layer 20 peels offfrom the alumite base material 10, and there is a fear of particlegeneration.

On the contrary, in the embodiment, the second region R2 in theconcavity 10 a has a sparse structure in comparison with the firstregion R1 on the surface side. Since the second region R2 has the sparsestructure, the stress generated near the interface of the first layer 20in the concavity 10 a and the alumite base material 10 can be releasedand relaxed. Thereby, the first layer 20 can be suppressed from peelingoff from the alumite base material 10.

As described above, according to the embodiment, while improving theplasma resistance of the surface of the first layer 20 formed on thealumite base material 10, the first layer 20 can be suppressed frompeeling off from the alumite base material 10 and the particles can bereduced.

FIG. 7a to FIG. 7C and FIG. 8A to FIG. 8D are photographs illustratingstructure analysis of the crystal particles in the first layer. Thefirst layer processed to have a thickness of approximately not less than70 nm and not less than 100 nm is used in the structure analysis.

FIG. 7A to FIG. 7C are photographs showing the analysis in the region Aof the first region R1. FIG. 7A is a TEM image showing an analyzedpoint. FIG. 7B shows a diffraction pattern of a polar electron beamdiffraction at a point P1 shown in FIG. 7A. FIG. 7C shows a diffractionpattern of a polar electron beam diffraction at a point P2 shown in FIG.7A.

A lattice spacing (d) of the crystal at the analyzed point and a faceangle of a lattice plane can be obtained from the diffraction pattern.The obtained lattice spacing and the face angle are compared with thelattice spacing and the face angle of the known structure (JCPDS card).Thereby, the crystal structure of the crystal particle at each point isdetermined.

The crystal structure at the point P1 is a monoclinic crystal of yttriaas shown in FIG. 7B. The crystal structure at the point P2 is also amonoclinic crystal of yttria as shown in FIG. 7C.

FIG. 8A to FIG. 8D are photographs showing the analysis in the region Eof the second region R2. FIG. 8A and FIG. 8C are TEM images showinganalyzed points. FIG. 8B shows a diffraction pattern of a polar electronbeam diffraction at a point P3 shown in FIG. 8A. FIG. 8D shows adiffraction pattern of a polar electron beam diffraction at a point P4shown in FIG. 8C.

The crystal structures at the points P3, P4 are determined as well asthe descriptions about the points P1, P2. The crystal structure at thepoint P3 is a cubic crystal of yttria as shown in FIG. 8B. The crystalstructure at the point P4 is a cubic crystal of yttria as shown in FIG.8D.

FIG. 9 is a table showing the crystal structure of the crystal particlein the first layer.

Analyses similar to descriptions with respect to FIG. 7A to FIG. 7C andFIG. 8A to FIG. 8D are performed for each of the regions A to F. FIG. 9shows the crystal structure of 2 points (2 views) among measurements of20 points in the respective regions. Results such as “monoclinicpredominant”, “cubic predominant”, “mixed crystal structure” aredetermined from the 20 points measurements.

The regions A and B are in “monoclinic predominant”, and the regions D,E and F are in “cubic predominant”. The region C is in the mixed crystalstructure of monoclinic crystal and cubic crystal. That is, for example,the first region R1 has a monoclinic crystal as a main phase, and thesecond region R2 has a cubic crystal as a main phase. The state of themonoclinic crystal being a main phase means the state in which points ofthe monoclinic crystal are more than points of the crystal structureother than the monoclinic crystal when the crystal structure is analyzedat multiple points (for example, not less than 20 points). Similarly,the state of the cubic crystal being a main phase means the state inwhich points of the cubic crystal are more than points of the crystalstructure other than the cubic crystal.

The monoclinic crystal is the crystal structure which is more distortedthan the cubic crystal. That is, the crystal particle in the firstregion R1 and the crystal particle in the region of the mixed crystalstructure are more distorted than the crystal particle in the secondregion R2. This means that when the first layer 20 is formed by theaerosol deposition method, the crystal particle in the first region R1is more collapsed than the crystal particle in the second region r2 andthe crystal particles in the region of the mixed crystal structure. Forthis reason, the first layer 20 has a dense structure on the surfaceside of the member for the semiconductor manufacturing device 120.Thereby, the plasma resistance can be improved. The first layer 20 has asparser structure in the second region R2 than the first region R1.Since the second region R2 has a sparse structure, the stress generatednear the interface of the first layer 20 in the concavity 10 a and thealumite base material 10 can be relaxed and the peeling off can beprevented.

FIG. 10 is a table showing the crystallite size in the first layer. Thecrystallite size is calculated about five samples (samples 1 to 5) ofthe first layer 20 according to the embodiment. The crystallite size(nm) of the cubic phase and the crystallite size (nm) of the monoclinicphase in the respective samples are calculated.

The following procedure 1 to the procedure 5 will be performed incalculating the crystallite size.

(Procedure 1): The X-ray diffraction spectrum of the yttrium compound(the first layer 20) formed on the alumite base material is acquired.

(Procedure 2): The X-ray spectrum is loaded by X-ray diffractionsoftware (PANalytical Co., High Score).

(Procedure 3): K-α2 line is removed.

(Procedure 4): Smoothing is performed.

(Procedure 5): The crystallite size is analyzed by using the followingScherrer formula.

D=Kλ/(β cos θ)

Here, D is a crystallite size, β is a peak half width (radian (rad)), θis a Bragg angle (rad), and λ is a wavelength of the X-ray used for themeasurement.

β is calculated by β=(βobs−βstd) in the Scherrer formula. βobs is a halfwidth of the X-ray diffraction peak of the measurement sample, βstd is ahalf width of the X-ray diffraction peak of the standard sample. 0.94 isused for a value of K. The peak from (222) plane is used for thecrystallite size of the cubic phase. The peak from (402) plane is usedfor the crystallite size of the monoclinic phase. A pseud-Voigt functionis adopted for separation of the peak.

As shown in FIG. 10, the crystallite size (the average particlediameter) of the monoclinic phase obtained from the X-ray diffraction issmall in comparison with the crystallite size (the average particlediameter) of the cubic phase obtained from the X-ray diffraction. In theembodiment, the crystallite size of the cubic phase is not less than 8nanometers and not more than 39 nanometers, more favorably not less than10 nm and not more than 21 nm, and the crystallite size of themonoclinic phase is not less than 5 nanometers and not more than 19nanometers, more favorably not less than 5 nm and not more than 12 nm.This means that yttrium oxide which is originally in the cubic phasecollapses and changes to the monoclinic phase in forming the first layer20 by the aerosol deposition method. That is, the first layer 20 has adense structure on the surface side of the member for the semiconductormanufacturing device 120. Thereby, the plasma resistance can beimproved.

FIG. 11A and FIG. 11B are a table and a graph showing an area ratio ofthe sparse region in the first layer.

FIG. 11A is a table showing an area ratio (%) of the sparse region ineach of the regions A, C to F. FIG. 11B shows the area ratio (%) of thesparse region shown in FIG. 11A in a graph.

Here, “area ratio (%) of sparse region” is a ratio of an area of thesparse region in a certain cross section to an area of the relevantcross section. The calculation of the specific “area ratio (%) of sparseregion” will be described with reference to FIG. 12A to FIG. 13D.

FIG. 12A to FIG. 13D are photographs showing the cross section of thefirst layer.

The following procedure 1 to the procedure 6 will be performed incalculating the area ratio (%) of the sparse region.

(Procedure 1): A TEM image of the cross section of the first layer 20 isloaded by image analysis software (Mitani Co., WINROOF). The observationmagnification of the TEM image is 250,000 times. The loaded TEM image isbased on a bright-field image.

(Procedure 2): The loaded image (TEM image) is converted to monochrome(gray scale) and corrected horizontally.

(Procedure 3): The region for image analysis is defined by ROI setting,and a portion unnecessary for the analysis is removed from the loadedTEM image. In this way, the observation range used for calculating thearea ratio (%) of the sparse region can be selected. A size of oneobservation range is not less than 500 nm square. For example, FIG. 12Ais a photograph for an observation range in the cross section of theregion A (view 1), and FIG. 12B is a photograph for another observationrange of the cross section in the range A (view 2). FIG. 13A is aphotograph for an observation range of the cross section of the range E(view 1), and FIG. 13B is a photograph for another observation range ofthe cross section in the region E (view 2).

(Procedure 4): Color of the image is expressed in 256 gradations. Then,a value for dark is taken as 0, a value for white is taken as 255. Themore white the color is, the structure is sparse, and the darker thecolor, the structure is dense. A region having a gradation value of 190or more in the image (regions where the color is white or near white) isselected and colored.

FIG. 12C is a drawing which the color of the photograph of FIG. 12A ischanged in order to emphasize the colored region in the photograph ofFIG. 12A. The region shown by dark black in FIG. 12C correspond to thecolored region by the procedure 4. Similarly, FIG. 12D shows the regioncolored by the procedure 4 in the photograph of FIG. 12B, FIG. 13C showsthe region colored by the procedure 4 in the photograph of FIG. 13A, andFIG. 13D shows the region colored by the procedure 4 in the photographof FIG. 13B.

(Procedure 5): A fill-in process is performed for the colored region,and holes in the colored region (uncolored places) are colored.

(Procedure 6): The ratio of the area of the colored region in oneobservation range to the area of the relevant observation range iscalculated on the software, and is taken as the area ratio of the sparseregion. That is, the area ratio of sparse region (%)=(area of thecolored region in the observation range)/(area of the observationrange)×100.

From the above procedures 1 to 6, the area ratio of the sparse region inthe observation range (view 1) shown in FIG. 12A is calculated to be0.4%. The area ratio of the sparse region in the observation range (view2) shown in FIG. 12B is 1.7%. In this way, it is found that the arearatio of the sparse region is low in the first region R1 (the region A),and the first region R1 has the dense structure.

Similarly, the area ratio (%) of the sparse region is calculated for 2views of each of the regions C to F, and the results are shown in FIG.11A and FIG. 11B. The area ratio of the sparse region of the firstregion R1 (the region A) is, for example, not less than 0.4% and notmore than 1.7%. The area ratio of the sparse region of the second regionR2 (the regions D to F) is, for example, not less than 2.0% and not morethan 9.3%.

It is found from the above that the first layer 20 has the densestructure in the first region R1 of the surface of the member for thesemiconductor manufacturing device 120, and has the sparse structure inthe second region R2 of on a side of the alumite base material 10.

FIG. 14 is a photograph showing the cross section of the member for thesemiconductor manufacturing device according to the embodiment.

FIG. 14 shows the cross section along the Z-axis direction of the firstlayer 20 and the alumite layer 12 as well as FIG. 3. The concavity 10 ahas a first portion 41 provided with the first region R1 and a secondportion 42 provided with the second region R2.

The first portion 41 and the second portion 42 are arranged in theZ-axis direction. The first portion is a portion of the concavity 10 alocated above, namely, a portion having a shallow hole. For example, thesurface of the alumite base material 10 forming the first portion 41surrounds a portion of the first region R1 in the X-Y plane. In otherwords, the portion of the first region R1 is located inside the firstportion 41. For example, the first portion 41 is a surface contactingthe first region R1 of the concavity 10 a.

The second portion 42 is a portion located below the first portion 41,namely, a portion having a deep hole. For example, the surface of thealumite base material 10 forming the second portion 42 surrounds thesecond region R2 in the X-Y plane. In other words, the second region R2is located in the second portion 42. For example, the second portion 42is a surface contacting the second region R2 of the concavity 10 a.

A width W of the concavity 10 a in the cross section shown in FIG. 14becomes narrower, as it goes away from the surface of the member for thesemiconductor manufacturing device 120. For example, a width W2 of thesecond portion 42 is narrower than a width W1 of the first portion 41.The width W1 of the first portion 41 is, for example, equivalent to adistance between surfaces of the alumite layers 12 arranged in theX-axis direction via the first region R1. The width W2 of the secondportion 42 is, for example, equivalent to a distance between surfaces ofthe alumite layers 12 in the X-axis direction via the second region R2.

If the width of the concavity 10 a changes rapidly at a certain portion,the stress concentrates in the portion. On the contrary, in the memberfor semiconductor manufacturing device 120 according to the embodiment,the width W of the concavity 10 a becomes narrow gradually in adirection from the first layer 20 toward the alumite base material 10.Thereby, the width W of the concavity 10 a can be suppressed fromchanging rapidly, and the stress generated near the interface of thefirst layer 20 in the concavity 10 a and the alumite base material 10can be suppressed from being concentrated. Therefore, the first layer 20can be suppressed from peeling off from the alumite base material 10,and the particles can be reduced.

FIG. 15 and FIG. 16 are photographs showing the cross section of themember for the semiconductor manufacturing device 120 according to theembodiment.

FIG. 15 and FIG. 16 show a cross section S along the Z-axis direction offirst layer 20 and the alumite layer 12.

An opening OP of the concavity 10 a (the first portion 41) has a firstend portion E1 and a second end portion E2 which are separate each otherin the cross section along the Z-axis direction. The first end portionE1 and the second end portion E2 are end portions in the X-axisdirection of the concavity 10 a, and upper end portions of the openingOP of the concavity 10 a.

Each of the first end portion E1 and the second end portion E2 is acontact point of a first straight line L1 and the alumite layer 12. Thefirst straight line L1 is a tangential line contacting the alumite layer12 across the concavity 10 a in a boundary of the first layer 20 and thealumite layer 12.

The concavity 10 a includes a right side portion PR and a left sideportion LP arranged each other in the X-axis direction in the crosssection along the Z-axis direction. The right side portion RP is locatedone side as seen from a center position Cp shown in FIG. 15, and theleft side portion LP is located on other side as seen from the centerposition Cp. The center position Cp is between a position in the X-axisdirection of the first end portion E1 and a position in the X-axisdirection of the second end portion E2. The first end portion E1 is, forexample, a point of the right side portion RP near the surface 202 ofthe outer most first layer 20. The second end portion E2 is, forexample, a point of the left side portion LP near the surface 202 of theouter most first layer 20.

As shown in FIG. 15, a distance between the first end portion E1 and thesecond end portion E2 is taken as an opening width WO of the firstportion 41.

Alternatively, as shown in FIG. 16, a top 50 t of a circle 50 may betaken as the first end portion E1 and a top 51 t of a circle 51 may betaken as the second end portion E2. The circle 50 is an inscribed circlecontacting a boundary 53 of the first layer 30 in the concavity 10 a andthe right side portion RP. The circle 51 is an inscribed circlecontacting a boundary 54 of the first layer 20 in the concavity 10 a andthe left side portion LP. The top 50 t is a point of the circle 50nearest to the surface 202 of the first layer 20, and the top 51 t is apoint of the circle 51 nearest to the surface 202 of the first layer 20.In this example, the second portion 42 has a bottom surface 42Bextending along the X-Y plane. In such a case, the boundary 53 and theboundary 54 do not include a boundary 55 of the first layer 20 and thebottom surface 42B. The boundary 53 and the boundary 54 are curvedupward convex (a direction toward the surface of the first layer 20).

As shown in FIG. 15, the bottom surface 43B has a third end portion E3and a fourth end portion E4 in the cross section along the Z-axisdirection. The third end portion E3 is located on the same side as thefirst end portion E1 as seen from the center position Cp. That is, thethird end portion E3 is a point on the right side portion RP. The fourthportion E4 is located on the same side as the second end portion E2 asseen from the center position Cp. That is, the fourth end portion E4 isa point on the left side portion LP. A distance between the first endportion E1 and the third end portion E3 is shorter than a distancebetween the first end portion E1 and the fourth end portion E4.

For example, the third end portion E3 or the fourth end portion E4 is apoint of the second portion 42 furthest from the surface 202 of thefirst layer 20. A distance between the third end portion E3 and thefourth end portion E4 is taken as a width WB of the bottom surface 42Bin the cross section along the Z-axis direction.

As shown in FIG. 15, an angle made by the straight line (the straightline L1) connecting the first end portion E1 and the second end portionE2 and a straight line L2 connecting the first end portion E1 and thebottom surface 42B in the shortest length is taken as an angle θ1(°).The straight line L2 is a straight line connecting the first end portionE1 and the third end portion E3.

In FIGS. 15, 16, for example, in the case where the concavity 10 a is acrack, the cross section perpendicular to an extending direction of thecrack in the X-Y plane is observed. In other words, the extendingdirection of the crack corresponds to, for example, the Y-axisdirection.

FIG. 17 is a table illustrating a shape of the first layer of the memberfor the semiconductor manufacturing device according to the embodiment.

For 25 samples of the first layer 20 according to the embodiment, aratio of the opening width WO of the first portion 41 to the width WB ofthe bottom surface 42B (WO/WB) is calculated.

As shown in FIG. 17, the ratio (WO/WB) is not less than 1.1 and not morethan 9.7. That is, in the embodiment, the opening width WO is not lessthan 1.1 times and not more than 9.7 times of the width WB. For example,in the cross section shown in FIG. 15, the opening width WO of the firstportion 41 is 14.5 μm and the width WB of the bottom surface 42B is 3.5μm, and the opening width WO is 4 times of the width WB.

When the ratio (WO/WB) is 1, the width of the first portion 41 and thewidth of the second portion 42 are the same. In this case, the stressconcentrates on the first portion 41, and there is a fear that the firstlayer 20 peels off from the alumite base material 10. On the contrary,in the embodiment, the ratio (WO/WB) is not less than 1.1 times.Thereby, concentration of the stress generated near the interface of thefirst layer 20 in the concavity 10 a and the alumite base material 10can be suppressed. Therefore, the first layer 20 can be suppressed frompeeling off from the alumite base material 10, and the particles can bereduced.

FIG. 18 is a table illustrating a shape of the first layer of the memberfor the semiconductor manufacturing device according to the embodiment.

For 25 samples of the first layer 20 according to the embodiment, theangle θ1 is calculated.

As shown in FIG. 18, in the embodiment, the angle θ1 is not less than10° and not more than 89°, more favorably not less than 17° and not morethan 73°. This shows that the width of the concavity 10 a becomes narrowgradually from the first region R1 toward the second region R2. Thereby,the width of the concavity 10 a can be suppressed from changing rapidly,and concentration of the stress generated near the interface of thefirst layer 20 in the concavity 10 a and the alumite base material 10can be suppressed. Therefore, the first layer 20 can be suppressed frompeeling off from the alumite base material 10, and the particles can bereduced.

In the cross section shown in FIG. 14, the boundary of the first layer20 in the concavity 10 a and the alumite base material 10 is curved, andhas a curvature. For example, virtual circles C1, C2, C3 approximate aportion of the boundary of the first layer 20 in the concavity 10 a andthe alumite base material 10, respectively. A radius of the virtualcircle C1 is 3.7 μm, a radius of the virtual circle C2 is 16.4 μm, and aradius of the virtual circle C3 is 16 μm. The respective virtual circlesshown in FIG. 14 are one example. In the cross section observation shownin FIG. 16, a curvature radius R of the boundary (the boundary 53 or theboundary 54) of the first layer 20 in the concavity 10 a and the alumitebase material 10 is obtained. The curvature radius R is a radius of thecircle 50 or the circle 51. In the case where a portion of the boundary53 or the boundary 54 has a concavity and convexity, that is, theboundary has not a curved shape, the curvature radius R is obtained fromthe virtual circles approximating a portion having a curved shape.

FIG. 19 is a table illustrating a shape of the first layer of the memberfor the semiconductor manufacturing device according to the embodiment.

For 25 samples of the first layer 20 according to the embodiment, thecurvature radius R is calculated.

As shown in FIG. 19, in the embodiment, the curvature radius R is notless than 0.4 μm and less than 50 μm.

If the boundary of the first layer 20 in the concavity 10 a and thealumite base material 10 has a discontinuous change, the stressconcentrates on the portion. On the contrary, in the member for thesemiconductor manufacturing device 120 according to the embodiment, theboundary of the first layer 20 in the concavity 10 a and the alumitebase material 10 is curved and has the curvature. Thereby, thediscontinuous change of the boundary of the first layer 20 in theconcavity 10 a and the alumite base material 10 can be suppressed andconcentration of the stress can be suppressed. Therefore, the firstlayer 20 can be suppressed from peeling off from the alumite basematerial 10.

Denseness of the first region R1 and denseness of the second region R2can be adjusted by a formation condition of the first layer 20 based onthe aerosol deposition method. For example, source material powder ofthe aerosol sprayed to the alumite base material 10 is adjusted.

For example, the source material powder of the aerosol is obtained bymixing oxide fine particles having 50% average particle diameter of 1.0to 5.0 μm based on volume standard (hereinafter, referred to as firstfine particle) and oxide fine particles having average particle diameterof less than 1 μm based on volume standard (hereinafter, referred to assecond fine particle). A ratio of mixing is the number of the first fineparticle: the number of the second fine particle=1:1 to 1:100. Each ofthe first fine particle and the second fine particle can be based onyttrium oxide or aluminum oxide, for example.

Since a particle diameter of the first fine particle is large, whensprayed to the alumite base material 10, impact due to the collision ofthe first fine particle is large. Thereby, the crystal particle isdistorted and the dense layer can be formed. In this way, the firstregion R1 can be dense by mixing the second fine particle of a smallparticle diameter with the first fine particle of a large particlediameter.

As described with respect to FIG. 14 to FIG. 19, the boundary of thefirst layer 20 in the concavity 10 a and the alumite base material 10can be curved by using the aerosol deposition method. For example, thefine particle included in the aerosol collides with the alumite basematerial 10, and thus a corner of the concavity (crack) of the anodeoxide coating deforms, and the boundary of the first layer 20 in theconcavity 10 a and the alumite base material 10 is curved.

FIG. 20A and FIG. 20B are photographs illustrating the member for thesemiconductor manufacturing device according to the embodiment.

FIG. 20A is a photograph showing the surface of the alumite basematerial 10 (the alumite layer 12) before forming the first layer 20.FIG. 20B is a photograph showing the surface of the first layer 20 afterforming the first layer 20. The observation range in FIG. 20B issubstantially the same as the observation range in FIG. 20A. A lasermicroscope (Olympus Co., LS400) is used for the observation.

As shown in FIG. 20A, concavities 12A to 12D are observed on the surfaceof the alumite layer 12. As shown in FIG. 20B, multiple concavities 10 a(concavities 10A to 10D) are observed on the surface of the first layer20.

The concavities 10A to 10D correspond to the concavities 12 a to 12D,respectively. That is, the concavities 10A, 10B, 10C, 10D are formed byforming the first layer 20 on the concavities 12A, 12B, 12 c, 12D,respectively.

Areas of the concavities 10A to 10D are larger than the areas of theconcavities 12A to 12D in a plan view. For example, it is consideredthat the corners of the concavities of the alumite layer 12 deform bythe collision of the fine particles included in the aerosol, and theconcavities are enlarged. The shapes of the concavities 10 a(concavities 10A to 10D) can be adjusted by the formation condition ofthe first layer 20 based on the aerosol deposition method. For example,the source material powder of the aerosol described above is adjusted.

Although the embodiments of the invention are described above, theinvention is not limited to these descriptions. Design modificationappropriately made by a person skilled in the art in regard to theembodiments described above is within the scope of the invention to theextent that the features of the invention are included. For example, theshape, the dimension, the material, the disposition or the like of thealumite base material and the first layer or the like are not limited toillustrations and can be changed appropriately.

The components included in the embodiments described above can becombined to the extent of technical feasibility and the combinations areincluded in the scope of the invention to the extent that the feature ofthe invention is included.

What is claimed is:
 1. A member for a semiconductor manufacturingdevice, comprising: an alumite base material including a concavitydefined therein; and a first layer formed on the alumite base materialand including an yttrium compound, the first layer including an outersurface, a first region on a side of the outer surface, and a secondregion provided in the concavity and located between the first regionand the alumite base material, the concavity including a first portionprovided with the first region and a second portion provided with thesecond region, a width of the second portion being narrower than a widthof the first portion in a cross section along a stacking direction, anda boundary of the first layer in the concavity and the alumite basematerial being curved convex toward the outer surface of the first layerin the cross section.
 2. The member for the semiconductor manufacturingdevice according to claim 1, wherein the second portion has a bottomsurface along a plane perpendicular to the stacking direction, and aratio of an opening width of the first portion to a width of the bottomsurface of the second portion is not less than 1.1 times in the crosssection.
 3. The member for the semiconductor manufacturing deviceaccording to claim 1, wherein the first layer also has a surfacecontacting the alumite base material which is opposite to the outersurface, and a width of the concavity in the cross section becomesnarrower as going away from the outer surface toward the surfacecontacting the alumite base material.
 4. The member for thesemiconductor manufacturing device according to claim 1, wherein anopening of the concavity has a first end portion and a second endportion separated from each other in the cross section, the secondportion has a bottom surface along a plane perpendicular to the stackingdirection, and an angle made by a straight line connecting the first endportion and the second end portion and a straight line connecting thefirst end portion and the bottom surface of the second portion in theshortest length in the cross section is not less than 10° and not morethan 89°.
 5. The member for the semiconductor manufacturing deviceaccording to claim 1, wherein a curvature radius of a boundary of thefirst layer in the concavity and the alumite base material is not lessthan 0.4 micrometers.